Electroluminescence analysis of VOC degradation of individual subcell in GaInP/GaAs/Ge space solar cells irradiated by 1.0 MeV electrons.

The open-circuit voltage (V OC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between V OC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at E v +0.55 ​eV styled H2 hole trap is nonradiative recombination centre in GaInP subcell, a defect located at E C -0.96 eV styled E5 electron trap is nonradiative recombination centre in GaAs subcell, and a defect located at E C -0.38 eV styled E-center electron trap is nonradiative recombination centre in Ge subcell. • Electroluminescence measurements can analyze subcells' open-circuit voltage. • Determination of the relationship between open-circuit voltage and electron fluence. • Electroluminescence measurements can determine the capture cross section of nonradiative recombination center. • The H2 defect in top-cell, E5 defect in mid-cell and E-center in bot-cell are primary nonradiative recombination centres. [ABSTRACT FROM AUTHOR]