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A CMOS Compatible Si Template with (111) Facets for Direct Epitaxial Growth of III–V Materials.
- Source :
-
Chinese Physics Letters . Feb2020, Vol. 37 Issue 2, p1-1. 1p. - Publication Year :
- 2020
-
Abstract
- III–V quantum dot (QD) lasers monolithically grown on CMOS-compatible Si substrates are considered as essential components for integrated silicon photonic circuits. However, epitaxial growth of III–V materials on Si substrates encounters three obstacles: mismatch defects, antiphase boundaries (APBs), and thermal cracks. We study the evolution of the structures on U-shaped trench-patterned Si (001) substrates with various trench orientations by homoepitaxy and the subsequent heteroepitaxial growth of GaAs film. The results show that the formation of (111)-faceted hollow structures on patterned Si (001) substrates with trenches oriented along [110] direction can effectively reduce the defect density and thermal stress in the GaAs/Si epilayers. The (111)-faceted silicon hollow structure can act as a promising platform for the direct growth of III–V materials for silicon based optoelectronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 37
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141653399
- Full Text :
- https://doi.org/10.1088/0256-307X/37/2/024203