Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films.

Ferroelectric multilayered thin film structures consisting of Pb 1.25 (Zr 0.52 ,Ti 0.48)O 3 and Pb 1.1 (Zr 0.52 ,Ti 0.48)O 3 have fabricated on Pt/Ti/SiO 2 /Si substrates by sol-gel synthesis. The effect of various layer ratios (m/n) of Pb 1.25 (Zr 0.52 ,Ti 0.48)O 3 and Pb 1.1 (Zr 0.52 ,Ti 0.48)O 3 thin films on the properties of PZT films were investigated. X-ray photoelectron spectroscopy (XPS) reveals that oxygen vacancies were suppressed by altering m/n. Dense perovskite structures were observed by Scanning electron microscope (SEM) analysis. Dielectric properties were enhanced significantly in the multilayered films. Especially, the ε r reaches 1873 at 1 kHz with a tanδ of 0.082 for the sample with a m/n of 1/3. Moreover, improved ferroelectricity (2 P r = 36.2 μC/cm2, 2 E c = 78 kV/cm), reduced leakage current density (2.91 × 10−7 A/cm2 at 185 kV/cm), and well fatigue resistance were obtained for the film (m/n = 1/3). [ABSTRACT FROM AUTHOR]