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Total ionizing dose effects on resistance stability of Pt/HfO2/Al2O3/TiN structure RRAM devices.
- Source :
-
Microelectronics Reliability . Mar2020, Vol. 106, pN.PAG-N.PAG. 1p. - Publication Year :
- 2020
-
Abstract
- Total-ionizing dose effects on the resistive switching properties of HfO 2 /Al 2 O 3 bipolar resistive-random-access-memory devices under 60Co γ irradiation were investigated in this study. Insignificant impact was found for 60Co γ irradiation with a dose of 200 krad (Si) but the impact became significant for higher irradiation intensity of 1 Mrad (Si). The experiment results indicated that it is possible for device high resistance off-state or low resistance on-state to change after a total ionizing dose step stress threshold being surpassed. Moreover, it was found that the 60Co γ irradiation of 1 Mrad (Si) caused degradation of device high-resistance state, low-resistance state, set/reset voltages, and endurance characteristics, due to the simultaneous induce of oxygen vacancies and displacement damage. Unlabelled Image [ABSTRACT FROM AUTHOR]
- Subjects :
- *RESISTANCE to change
*IRRADIATION
Subjects
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 106
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 141780537
- Full Text :
- https://doi.org/10.1016/j.microrel.2020.113592