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XPS characterisation of neodymium gallate wafers
- Source :
-
Journal of Alloys & Compounds . Sep2004, Vol. 377 Issue 1/2, p259-267. 9p. - Publication Year :
- 2004
-
Abstract
- XPS examinations of NdGaO3 single crystals were performed. A change of the chemical composition was found in wafers cut from the beginning, middle and end part of a crystal grown along the [0 1 1] direction. The existence of core level satellites at low binding energy related to defects was revealed. Unpolished, polished and substrates etched with H3PO4 show a decrease of gallium concentration in relation to a broken surface and to the nominal composition. Annealing of the substrates at different temperatures causes a decomposition due to escape of gallium not only from the surface but from inner parts as well. A comparison of the wafers from the crystals grown along different crystallographic direction reveals changes of the chemical composition and a variable level of defects. This was confirmed by etch pitch density measurements. The above measurements demonstrate the high sensitivity of gallium on processing. [Copyright &y& Elsevier]
- Subjects :
- *NEODYMIUM
*BINDING energy
*GALLIUM
*CRYSTALS
Subjects
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 377
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 14188723
- Full Text :
- https://doi.org/10.1016/j.jallcom.2004.01.037