Phase-controlled large-area growth of MoTe2 and MoTe2-xOx/MoTe2 heterostructures for tunable memristive behavior.

Two dimensional layered materials show great potential in memristor applications. MoTe 2 shows unique properties and is an important 2D material. However, MoTe 2 - based memristor has been rarely studied so far. Herein, a facile method is developed to control phase in large area MoTe 2 and MoTe 2-x O x /MoTe 2 heterostructures by precursor thickness in chemical vapor deposition. The memristive behavior of MoTe 2 is highly influenced by phase and oxidization states in MoTe 2-x O x /MoTe 2 heterostructures. The original 2H and 1 T' MoTe 2 doesn't have memristive property while the surface oxidized 2H-MoTe 2 based MoTe 2-x O x /MoTe 2 heterostructures behave excellent and stable memristive behavior for at least 3000 cycles. 1 T' -MoTe 2 based heterostructures still show no memristive behavior. In addition, we compare the effect of metal electrode (Ag electrode and Al electrode) on heterostructures based memristor. The pulse tests about memristor from oxidized 2H-MoTe 2 based heterostructures show a good mimic of biological synapses in neuromorphic system. • A facile method is developed to control phase in large area MoTe 2 and MoTe 2-x O x /MoTe 2 heterostructures by precursor thickness in CVD. • The memristive behavior of MoTe 2 is highly influenced by phase and oxidization states in MoTe 2-x O x /MoTe 2 heterostructures. • The pulse test about memristor from oxidized 2H-MoTe 2 based heterostructure show a good mimic of biological synapses in neuromorphic system. [ABSTRACT FROM AUTHOR]