Scaling behavior of dynamic ferroelectric hysteresis for semiconductor–relaxor (0–3) type ZnO-(Bi0.5Na0.5)0.94Ba0.06TiO3 composite.

Currently, semiconductor–relaxor ferroelectric (0–3) type composites are promising lead-free ferroelectric candidates for high-temperature piezoelectric applications. Among all, 0.30(ZnO)-0.70[(Bi0.5Na0.5)0.94Ba0.06TiO3] is one of the most studied composites by researchers. Therefore, to understand the role of ZnO on the polarization reversal process and domain states of (Bi0.5Na0.5)0.94Ba0.06TiO3, the dynamic ferroelectric hysteresis of the present composite has been investigated as a function of electric field amplitude (E0) and frequency (f). According to the power law, a set of scaling relations between the loop area ⟨A⟩ with E0 and f have been established for minor and saturated loops, which take the form of ⟨ A ⟩ ∝ f − 0.389 E 0 4.586 and ⟨ A ⟩ ∝ f − 0.021 E 0 1.066 , respectively. Also, it is interesting to note that the frequency-dependent ferroelectric hysteresis loops [for the saturated field (E0) = 50 kV/cm] exhibit the unique two-stage scaling behavior. Additionally, the origin of enhancement in the domain switching process for minor loop regions has been correlated with the presence of a semiconductor (ZnO), which is extensively discussed in the present study. [ABSTRACT FROM AUTHOR]