Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending.

MLA

Wang, Weijie, et al. “Modulation of the Two-Dimensional Electron Gas Channel in Flexible AlGaN/GaN High-Electron-Mobility Transistors by Mechanical Bending.” Applied Physics Letters, vol. 116, no. 12, Mar. 2020, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.5142546.

APA

Wang, W., Chen, J., Lundh, J. S., Shervin, S., Oh, S. K., Pouladi, S., Rao, Z., Kim, J. Y., Kwon, M.-K., Li, X., Choi, S., & Ryou, J.-H. (2020). Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending. Applied Physics Letters, 116(12), 1–5. https://doi.org/10.1063/1.5142546

Chicago

Wang, Weijie, Jie Chen, James Spencer Lundh, Shahab Shervin, Seung Kyu Oh, Sara Pouladi, Zhoulyu Rao, et al. 2020. “Modulation of the Two-Dimensional Electron Gas Channel in Flexible AlGaN/GaN High-Electron-Mobility Transistors by Mechanical Bending.” Applied Physics Letters 116 (12): 1–5. doi:10.1063/1.5142546.