Back to Search
Start Over
High Absorption Contrast Quantum Confined Stark Effect in Ultra-Thin Ge/SiGe Quantum Well Stacks Grown on Si.
- Source :
-
IEEE Journal of Quantum Electronics . Feb2020, Vol. 56 Issue 1, p1-7. 7p. - Publication Year :
- 2020
-
Abstract
- We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast $\Delta \alpha /\alpha $ of 2.1 at 1 Vpp swing in QCSE stacks grown on ultra-thin (100 nm) strain relaxed GeSi buffer layers on 300 mm Si wafers. Such ultra-thin QCSE stacks will enable future integration of highly efficient QCSE electro-absorption modulators with low optical coupling loss to passive Si waveguides in a sub-micron silicon photonics platform. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 56
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 142488625
- Full Text :
- https://doi.org/10.1109/JQE.2019.2949640