Orientation transition, dielectric, and ferroelectric behaviors of sol-gel derived PZT thin films deposited on Ti–Pt alloy layers: A Ti content-dependent study.

Lead zirconate titanate (PZT) films have been deposited on Ti–Pt/Ti/SiO 2 /Si(100) alloy substrates by sol-gel process. The purpose of the present study was to examine the Ti content in the Ti–Pt alloy layers-dependent preferred orientation and electrical behaviors of PZT films. X-ray diffraction (XRD) shows that Ti–Pt alloy electrodes induces texture transition from (100) to (111), and the maximum peak of (100) and minimum peak of (111) are obtained in the sample on Ti–Pt alloy layer with a sputtering power of 12.5 W/150 W. The film deposited on Ti–Pt alloy layer with a sputtering power of 12.5 W/150 W exhibits a reduced oxygen vacancies concentration, which results in a maximum ε of 1224.25, an enhanced 2 P r of 40.5 μC/cm2, and a relative decreased 2 E c of 108 kV/cm. Therefore, it can be concluded that the Ti–Pt alloy layers with an appropriate Ti content play a very critical role for the preferred orientation, microstructure, and improved electrical properties of the PZT films. [ABSTRACT FROM AUTHOR]