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Structural and electric properties of SrZrO3 thin films on different Pt bottom electrodes
- Source :
-
Ceramics International . Aug2004, Vol. 30 Issue 7, p1547-1551. 5p. - Publication Year :
- 2004
-
Abstract
- SrZrO3 thin films were deposited on Pt/Ti/SiO2/Si and Pt/TiO2/SiO2/Si substrates by the metal-organic decomposition technology followed by post-annealing at different temperatures ranging from 550 to 800 °C in flowing oxygen atmosphere. The microstructure characteristics of these films were investigated using X-ray diffraction, Fourier transform infrared reflectivity spectroscopy and scanning electron microscopy. Their dielectric and leakage current characteristics were evaluated by a HP-4284A precision LCR meter and a HP-4155B semiconductor parameter analyzer, respectively. The phase transformation and crystallinity results indicate that the film has amorphous structure with carbonate existing when annealed at 550 °C; however when annealed at 600 °C and above, the carbonate is decomposed and those films crystallize into the Perovskite phase. The dielectric constant of SrZrO3 is above 22 with little dispersion in a frequency range from 100 Hz to 1 MHz. The results also indicate that when annealed above 650 °C, the films using Pt/TiO2/SiO2/Si show much better leakage properties compared with those using Pt/Ti/SiO2/Si. And even annealed at 800 °C, the films deposited on Pt/TiO2/SiO2/Si substrate still have good leakage properties. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 30
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 14252943
- Full Text :
- https://doi.org/10.1016/j.ceramint.2003.12.095