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Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories.
- Source :
-
IEEE Transactions on Electron Devices . Sep2004, Vol. 51 Issue 9, p1392-1400. 9p. - Publication Year :
- 2004
-
Abstract
- Data retention in flash memories is limited by anomalous charge loss. In this work, this phenomenon is modeled with a percolation concept. An analytical model is constructed that relates the charge-loss distribution of moving bits in flash memories with the geometric distribution of oxide traps. The oxide is characterized by a single parameter, the trap density. Combined with a trap-to-trap direct tunneling model, the physical parameters of the electron traps involved in the leakage mechanism are determined. Flash memory failure rate predictions for different oxide qualities, thicknesses and tunnel-oxide voltages are calculated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 14256998
- Full Text :
- https://doi.org/10.1109/TED.2004.833583