Cite
Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.
MLA
Takahashi, Masahiro, et al. “Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.” Physica Status Solidi (B), vol. 257, no. 4, Apr. 2020, pp. 1–7. EBSCOhost, https://doi.org/10.1002/pssb.201900554.
APA
Takahashi, M., Tanaka, A., Ando, Y., Watanabe, H., Deki, M., Kushimoto, M., Nitta, S., Honda, Y., Shima, K., Kojima, K., Chichibu, S. F., Chen, K. J., & Amano, H. (2020). Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature. Physica Status Solidi (B), 257(4), 1–7. https://doi.org/10.1002/pssb.201900554
Chicago
Takahashi, Masahiro, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, et al. 2020. “Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature.” Physica Status Solidi (B) 257 (4): 1–7. doi:10.1002/pssb.201900554.