Cite
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.
MLA
Delgado Carrascon, Rosalia, et al. “Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.” Physica Status Solidi (B), vol. 257, no. 4, Apr. 2020, pp. 1–5. EBSCOhost, https://doi.org/10.1002/pssb.201900581.
APA
Delgado Carrascon, R., Tran, D. Q., Sukkaew, P., Mock, A., Ciechonski, R., Ohlsson, J., Zhu, Y., Hultin, O., Monemar, B., Paskov, P. P., Samuelson, L., & Darakchieva, V. (2020). Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates. Physica Status Solidi (B), 257(4), 1–5. https://doi.org/10.1002/pssb.201900581
Chicago
Delgado Carrascon, Rosalia, Dat Quoc Tran, Pitsiri Sukkaew, Alyssa Mock, Rafal Ciechonski, Jonas Ohlsson, Yadan Zhu, et al. 2020. “Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.” Physica Status Solidi (B) 257 (4): 1–5. doi:10.1002/pssb.201900581.