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One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . May2020, Vol. 67 Issue 5, p1551-1561. 11p. - Publication Year :
- 2020
-
Abstract
- This paper presents a one-sided Schmitt-trigger-based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-trigger inverter write assist technique that controls the trip voltage of the Schmitt-trigger inverter. The proposed Schmitt-trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang’s 10T, the Schmitt-trigger-based 10T, and MH’s 9T static random access memory cells, respectively, based on 22-nm FinFET technology. [ABSTRACT FROM AUTHOR]
- Subjects :
- *STATIC random access memory
*ENERGY consumption
Subjects
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 67
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 143000717
- Full Text :
- https://doi.org/10.1109/TCSI.2020.2964903