Cite
Analytical Model Developed for Precise Stress Estimation of Device Channel Within Advanced Planar MOSFET Architectures.
MLA
Lee, Chang-Chun, et al. “Analytical Model Developed for Precise Stress Estimation of Device Channel Within Advanced Planar MOSFET Architectures.” IEEE Transactions on Electron Devices, vol. 67, no. 4, Apr. 2020, pp. 1498–505. EBSCOhost, https://doi.org/10.1109/TED.2020.2971715.
APA
Lee, C.-C., Huang, P.-C., & Lin, Y.-C. (2020). Analytical Model Developed for Precise Stress Estimation of Device Channel Within Advanced Planar MOSFET Architectures. IEEE Transactions on Electron Devices, 67(4), 1498–1505. https://doi.org/10.1109/TED.2020.2971715
Chicago
Lee, Chang-Chun, Pei-Chen Huang, and Yan-Cian Lin. 2020. “Analytical Model Developed for Precise Stress Estimation of Device Channel Within Advanced Planar MOSFET Architectures.” IEEE Transactions on Electron Devices 67 (4): 1498–1505. doi:10.1109/TED.2020.2971715.