Growth and Electrical Properties of V2O5 Nanostructures.

Vanadium pentoxide nanostructured thin films are synthesized using thermal evaporation and are plasma annealed. XRD results depict that films exhibit orthorhombic crystalline phase of vanadium oxide (i.e. V2O5). As annealing temperature increases the growth of V2O5 nanostructures increases. Scanning electron micrographs show that different morphologies are obtained with different annealing temperatures. At lower plasma annealing temperature (i.e. 350 °C), 1D nanostructures are obtained, whereas for higher annealing temperature (550 °C) the embedded nano-blocks are obtained. A TEM/HRTEM measurement is conducted, which asserts the crystalline nature of nano-blocks. There is a remarkable decrease in resistance in temperature ranging from 240 K to 480 K suggests semiconductor behavior of films. The effect of temperatures of plasma annealing on the V2O5 nanostructured thin films (NSTs) is studied. [ABSTRACT FROM AUTHOR]