Forming Free Resistive Switching Characteristics in Al/NiFe2O4/FTO Device.

In this study, we report the Resistive Switching (RS) characteristics of nanostructured NiFe2O4 (NFO) films using an Al(aluminum)/NiFe2O4/FTO(fluorine-doped tin oxide) RS device. The fabricated Al/NiFe2O4/FTO RS device exhibits a forming free resistive switching with two completely distinguishable resistance states and a sufficiently high resistance ratio of the high resistance state (HRS) and the low resistance state (LRS). The non-volatile nature and switching capability of the device was studied by performing endurance and retention measurements, which indicates that the HRS and LRS are stable with time and can be switched into each other by applying controlled voltage or bias. [ABSTRACT FROM AUTHOR]