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First principle study of Bias Voltage dependent Schottky barrier height of Pt/MgO interface.
- Source :
-
AIP Conference Proceedings . 2020, Vol. 2220 Issue 1, p090017-1-090017-3. 3p. 1 Diagram, 1 Graph. - Publication Year :
- 2020
-
Abstract
- The Pt/MgO (100) interface electronic properties have been analyzed with first principles density functional theory plus nonequilibrium greenes function (NEGF) framework. We analysed n-type schottky barrier hight (SBH) of metal-insulator (Pt/MgO) interface for various biase voltage using two probe model. The applied bias voltage +0.5 V for left and right electrode of supercell, we found large n-SBH is 3.12 eV due to strong interface dipoles. Similarly, in the case of bias voltage -0.5 V for left and +0.5 V for right electrode the n-SBH is lower by 1.91 V. These large SBH values are useful in electronic applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SCHOTTKY barrier
*ELECTRIC potential
*DENSITY functional theory
*ALTITUDES
Subjects
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 2220
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 143104036
- Full Text :
- https://doi.org/10.1063/5.0001437