Cite
Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films.
MLA
Stoever, Julian, et al. “Approaching the High Intrinsic Electrical Resistivity of NbO2 in Epitaxially Grown Films.” Applied Physics Letters, vol. 116, no. 18, May 2020, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0005523.
APA
Stoever, J., Boschker, J. E., Bin Anooz, S., Schmidbauer, M., Petrik, P., Schwarzkopf, J., Albrecht, M., & Irmscher, K. (2020). Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films. Applied Physics Letters, 116(18), 1–5. https://doi.org/10.1063/5.0005523
Chicago
Stoever, Julian, Jos E. Boschker, Saud Bin Anooz, Martin Schmidbauer, Peter Petrik, Jutta Schwarzkopf, Martin Albrecht, and Klaus Irmscher. 2020. “Approaching the High Intrinsic Electrical Resistivity of NbO2 in Epitaxially Grown Films.” Applied Physics Letters 116 (18): 1–5. doi:10.1063/5.0005523.