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Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices.
- Source :
-
Journal of Applied Physics . 5/14/2020, Vol. 127 Issue 18, p1-9. 9p. 1 Diagram, 2 Charts, 7 Graphs. - Publication Year :
- 2020
-
Abstract
- Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 127
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 143228481
- Full Text :
- https://doi.org/10.1063/5.0003740