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Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors.
- Source :
-
Applied Physics Letters . 5/11/2020, Vol. 116 Issue 19, p1-5. 5p. 2 Charts, 3 Graphs. - Publication Year :
- 2020
-
Abstract
- Amorphous Ga2O3:CdO thin films and their thin-film transistor (TFT) photodetectors were fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT electrical parameters can be effectively regulated via changing the Cd content. The optimized Ga2O3:CdO TFT photodetector exhibited a responsivity of 2.17 A/W and a high UV/vis. rejection of 1.88 × 104 under 260 nm at small working biases, which are comparable or even superior to the recently reported results. Systematic comparison between metal-semiconductor-metal- and TFT-type photodetectors further confirmed that our TFT photodetectors had superior detective performance and lower electrical power consumption. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHOTODETECTORS
*THIN film transistors
*OPTICAL films
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 143248299
- Full Text :
- https://doi.org/10.1063/5.0007617