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Frequency-Improved 4H-SiC IGBT With Multizone Collector Design.
- Source :
-
IEEE Transactions on Electron Devices . Jan2020, Vol. 67 Issue 1, p198-203. 6p. - Publication Year :
- 2020
-
Abstract
- A novel 4H-SiC multizone collector vertical insulated-gate bipolar transistor (MZC-IGBT) with an alternate P+/P−/P+ multizone structure in the collector region is proposed and investigated by numerical simulations in this article. Comparing with conventional 4H-SiC IGBTs, lower potential barrier regions are formed in the proposed MZC-IGBT at the interface between the N field-stop buffer and the collector region, modifying the carrier extraction effect to a proper level and resulting in a superior tradeoff between the static and dynamic performances. The proposed device consumes less energy in a wide frequency range. The numerical simulation reveals that the average dissipation power of the optimized 4H-SiC MZC-IGBT can be decreased by 63.1% at a high frequency of 20 kHz and even 2.26% at a low frequency of 500 Hz, which makes the proposed device much more suitable for high-frequency applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INSULATED gate bipolar transistors
*TRANSISTORS
*POTENTIAL barrier
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 143315650
- Full Text :
- https://doi.org/10.1109/TED.2019.2951021