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Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model.
- Source :
-
IEEE Transactions on Electron Devices . Mar2020, Vol. 67 Issue 3, p1126-1131. 6p. - Publication Year :
- 2020
-
Abstract
- In this article, we demonstrate that a physics-based compact model can facilitate to analyze the reliability using an example of γ-ray induced instability in AlGaN/GaN HEMTs. First, the typical AlGaN/GaN HEMTs are subjected to the cumulative γ-ray irradiation, exhibiting the drain current (ID) increase. In order to further elucidation, the root cause, the compact model is implemented and calibrated with the pristine case. Then, ID – VG and ID – VD characteristics subjected to the γ-ray irradiation are fitted with the compact model. The extracted μ and Rc are consistent with the results obtained by the Hall measurement and circular transmission line measurement (C-TLM). By comparing the fitted curves with considering: 1) fitted μ (Rc is fixed as the pristine case) and 2) fitted Rc (μ is fixed as the pristine case), the shift of μ is identified as the root cause leading to the ID increase because of the better fitting results. Therefore, with the assistance of the physics-based compact model, the shift of the parameter can be further analyzed to understand the origin of the instability. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRIC lines
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 143315750
- Full Text :
- https://doi.org/10.1109/TED.2020.2965555