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Raman spectroscopy of GaSb1−xBix alloys with high Bi content.
- Source :
-
Applied Physics Letters . 5/18/2020, Vol. 116 Issue 20, p1-5. 5p. 1 Chart, 3 Graphs. - Publication Year :
- 2020
-
Abstract
- We report on the crystal morphology and Raman scattering features of high structural quality GaSb1−xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 143414362
- Full Text :
- https://doi.org/10.1063/5.0008100