Cite
Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride.
MLA
Cong, Hui, et al. “Kerr Nonlinearity Induced Four-Wave Mixing of CMOS-Compatible PECVD Deposited Ultra-Si-Rich-Nitride.” Journal of Applied Physics, vol. 128, no. 1, July 2020, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0006151.
APA
Cong, H., Feng, Q., Zhang, J., Wang, J., Wei, W., Wang, T., & Zhang, J. (2020). Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride. Journal of Applied Physics, 128(1), 1–7. https://doi.org/10.1063/5.0006151
Chicago
Cong, Hui, Qi Feng, Jieyin Zhang, Jianhuan Wang, Wenqi Wei, Ting Wang, and Jianjun Zhang. 2020. “Kerr Nonlinearity Induced Four-Wave Mixing of CMOS-Compatible PECVD Deposited Ultra-Si-Rich-Nitride.” Journal of Applied Physics 128 (1): 1–7. doi:10.1063/5.0006151.