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On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs...
- Source :
-
IEEE Transactions on Electron Devices . Jan99, Vol. 46 Issue 1, p2. 8p. 3 Black and White Photographs, 1 Diagram, 1 Chart, 9 Graphs. - Publication Year :
- 1999
-
Abstract
- Presents information on a study which focused on the on-state and off-state breakdown of GaInAs/InP composite-channel high electron mobility transistors. Device structure and performance; On-state and off-state breakdown characteristics; Discussion of the results; Conclusions.
- Subjects :
- *MODULATION-doped field-effect transistors
*ELECTRIC breakdown
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 1447958
- Full Text :
- https://doi.org/10.1109/16.737434