Improvement of transparent conductive properties of Cu films by introducing H2 into deposition atmosphere during RF magnetron sputtering.

Different thicknesses (2–250 nm) of Cu films were deposited on glass substrate by RF magnetron sputtering in Ar and Ar + H 2 atmospheres at room temperature. It is found that crystallinity and conductive properties of the films enhance but visible light transmittance (T Vis) decreases with increase of film thickness. Compared with the Cu films deposited in Ar, those deposited in Ar + H 2 have higher crystallinity and surface roughness, and they have better conductive properties and higher T Vis at film thickness above 5 nm. Overall, the Cu films deposited in Ar and Ar + H 2 can be achieved higher figure of merit (FOM) in a thickness range of 3~5 and 5~8.5 nm, respectively. Furthermore, the higher FOM values of Cu film deposited in Ar + H 2 atmosphere are higher than those of Cu film deposited in Ar atmosphere. The correlation between the improvement of transparent conductive properties of Cu films and modification of film microstructure due to introduction of H 2 into deposition atmosphere is discussed. • Cu films with different thicknesses are prepared in Ar and Ar + H 2 atmospheres. • The ρ , n , μ and R s of Cu films with different thicknesses are investigated. • High FOM of Cu films can be obtained by optimizing the film thickness. • Effect of introducing H 2 on structure and properties of Cu films is analyzed. • Transparent conductive properties of Cu films can be improved by introducing H 2. [ABSTRACT FROM AUTHOR]