Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity.

MLA

Maity, Subir Kumar, et al. “Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity.” IEEE Transactions on Electron Devices, vol. 67, no. 6, June 2020, pp. 2282–89. EBSCOhost, https://doi.org/10.1109/TED.2020.2984578.

APA

Maity, S. K., Haque, A., & Pandit, S. (2020). Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity. IEEE Transactions on Electron Devices, 67(6), 2282–2289. https://doi.org/10.1109/TED.2020.2984578

Chicago

Maity, Subir Kumar, Anisul Haque, and Soumya Pandit. 2020. “Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity.” IEEE Transactions on Electron Devices 67 (6): 2282–89. doi:10.1109/TED.2020.2984578.