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Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs.
- Source :
-
IEEE Transactions on Electron Devices . Jul2020, Vol. 67 Issue 7, p2697-2701. 5p. - Publication Year :
- 2020
-
Abstract
- The generation of defect states in p-MOSFETs under negative bias temperature instability (NBTI) has been extensively discussed in previous literature. However, only a few studies have discussed the relationship between interface defects and off-state leakage. Therefore, this article analyzes the impact of interface defects generated by NBTI on gate-induced drain leakage (GIDL). In general, GIDL is generated through band-to-band tunneling (BTBT) at large gate-to-drain bias (VGD). In this article, NBTI causes an increase in GIDL at extremely low VGD. By measuring at different temperatures and comparing the GIDL generated from hot carrier degradation (HCD), it was confirmed that the GIDL would still be generated through trap-assisted tunneling (TAT) and thermal excitation at an extremely low VGD. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 144948346
- Full Text :
- https://doi.org/10.1109/TED.2020.2992004