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Quasicrystalline phase-change memory.

Authors :
Lee, Eun-Sung
Yoo, Joung E.
Yoon, Du S.
Kim, Sung D.
Kim, Yongjoo
Hwang, Soobin
Kim, Dasol
Jeong, Hyeong-Chai
Kim, Won T.
Chang, Hye J.
Suh, Hoyoung
Ko, Dae-Hong
Cho, Choonghee
Choi, Yongjoon
Kim, Do H.
Cho, Mann-Ho
Source :
Scientific Reports. 8/13/2020, Vol. 10 Issue 1, p1-9. 9p.
Publication Year :
2020

Abstract

Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) with low phase-change energy and sufficient thermal stability is difficult because phase-change energy and thermal stability decrease simultaneously as the amorphous phase destabilizes. This issue arising from the trade-off relationship between stability and energy consumption can be solved by reducing the entropic loss of phase-change energy as apparent in crystalline-to-crystalline phase-change process of a GeTe/Sb2Te3 superlattice structure. A paradigm shift in atomic crystallography has been recently produced using a quasi-crystal, which is a new type of atomic ordering symmetry without any linear translational symmetry. This paper introduces a novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase-change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure. This report includes a new concept that reduces entropic loss using a quasicrystalline state and takes the first step in the development of new PCMs with significantly low phase-change energy and considerably high thermal stability. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20452322
Volume :
10
Issue :
1
Database :
Academic Search Index
Journal :
Scientific Reports
Publication Type :
Academic Journal
Accession number :
145108647
Full Text :
https://doi.org/10.1038/s41598-020-70662-2