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Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals.
- Source :
-
Chinese Physics B . Jan2020, Vol. 29 Issue 2, p1-4. 4p. - Publication Year :
- 2020
-
Abstract
- High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga2O3 single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β-Ga2O3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe: β-Ga2O3 crystal reached to 3.63 × 1011 Ω ⋅cm. The high resistivity Fe: β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 29
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 145170661
- Full Text :
- https://doi.org/10.1088/1674-1056/ab942d