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Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen.
- Source :
-
Nanomaterials (2079-4991) . Aug2020, Vol. 10 Issue 8, p1491-1491. 1p. - Publication Year :
- 2020
-
Abstract
- We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 103. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 104 s. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GRAPHENE oxide
*ALBUMINS
*INDIUM tin oxide
*FLASH memory
*EGGS
Subjects
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 10
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Nanomaterials (2079-4991)
- Publication Type :
- Academic Journal
- Accession number :
- 145244318
- Full Text :
- https://doi.org/10.3390/nano10081491