Cite
Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge.
MLA
Wang, Kaihong, et al. “Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge.” IEEE Transactions on Power Electronics, vol. 36, no. 1, Jan. 2021, pp. 888–97. EBSCOhost, https://doi.org/10.1109/TPEL.2020.3005183.
APA
Wang, K., Zhou, L., Sun, P., & Du, X. (2021). Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge. IEEE Transactions on Power Electronics, 36(1), 888–897. https://doi.org/10.1109/TPEL.2020.3005183
Chicago
Wang, Kaihong, Luowei Zhou, Pengju Sun, and Xiong Du. 2021. “Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge.” IEEE Transactions on Power Electronics 36 (1): 888–97. doi:10.1109/TPEL.2020.3005183.