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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces.
- Source :
-
Applied Physics Letters . 9/8/2020, Vol. 117 Issue 10, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- Ni/Al2O3/GaN structures with vicinal GaN surfaces from the c- or m-plane were formed. Then, electrical interface properties of the structures were systematically investigated. It was found that interface state density (Dit) at the Al2O3/GaN interface for the c-plane is higher than that for the m-plane, and post-metallization annealing is quite effective to reduce Dit for both c- and m-planes. As a result, the low Dit value of ∼ 3 × 1010 eV−1 cm−2 was demonstrated for both planes. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DENSITY of states
*INTERFACE structures
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 117
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 145693565
- Full Text :
- https://doi.org/10.1063/5.0010774