Cite
Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices
MLA
Ramamoorthy, K., et al. “Development of a Novel High Speed (Electron-Mobility) Epi-n-ZnO Thin Films by L-MBE for III–V Opto-Electronic Devices.” Current Applied Physics, vol. 4, no. 6, Nov. 2004, pp. 679–84. EBSCOhost, https://doi.org/10.1016/j.cap.2004.04.001.
APA
Ramamoorthy, K., Jayachandran, M., Sankaranarayanan, K., Misra, P., Kukreja, L. M., & Sanjeeviraja, C. (2004). Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices. Current Applied Physics, 4(6), 679–684. https://doi.org/10.1016/j.cap.2004.04.001
Chicago
Ramamoorthy, K., M. Jayachandran, K. Sankaranarayanan, Pankaj Misra, L.M. Kukreja, and C. Sanjeeviraja. 2004. “Development of a Novel High Speed (Electron-Mobility) Epi-n-ZnO Thin Films by L-MBE for III–V Opto-Electronic Devices.” Current Applied Physics 4 (6): 679–84. doi:10.1016/j.cap.2004.04.001.