Gain-coupled 770 nm DFB semiconductor laser based on surface grating.

Single-longitudinal-mode gain-coupled distributed feedback (DFB) lasers based on high-order gain-coupled surface gratings emitting at 770 nm window are implemented. The periodic surface metal p-contact with insulated grating grooves realizes a gain coupled mechanism. Our devices provided a single longitudinal mode with the maximum CW output power up to 116.8 mW@400 mA with facet coated (HR>99%, AR<0.5%), 3 dB linewidth is 0.26 pm and SMSR is 36 dB. Due to easy-to-manufacture technology and stable performance, it provides a practical gain-coupled distributed feedback laser emitting at 770 nm region manufacturing method for commercial applications. • No secondary epitaxy and no complicated photo lithography techniques are used. • Using surface grating and periodic electrical injection. • Forming a gain coupling mechanism. • Fabricating a purely gain-coupled DFB laser at 770 nm. [ABSTRACT FROM AUTHOR]