Pure sulfide Cu2ZnSnS4 layers through a one-step low-temperature PLD technique: Insight into simulation on modified back contact to overcome the barrier of MoS2.

• CZTS thin films were deposited by the PLD technique. • The effect of substrate temperature was investigated systematically. • Without the sulfurization process, the single-phase CZTS is prepared at a low temperature of 300 ℃. • The simulation was run to study the effect of substrate/Mo/MoSe 2 on the pure sulfide kesterite solar cells. • An improvement in conversion efficiency from 5.4% to 13.99% has been predicted. Targeting on the selenium free, pure sulfide kesterite compound (CZTS) allows retention of the higher band gap nontoxic absorber for a single-junction solar cell. In this work, CZTS thin films were deposited by the PLD method and the Structural/optical properties, as well as Mott–Schottky analysis, were studied at different substrate temperatures. Without undergoing the sulfurization process, the single-phase CZTS thin film is prepared at 300 ℃. In the second step, a numerical simulation is performed using the solar cell capacitance simulator to study the effect of the grading layer of MoS(Se) 2 on the rear side of pure sulfide kesterite based solar cells. The device with a MoSe 2 coated substrate exhibits better performance in comparison with the soda-lime-glass (SLG)/Mo that is susceptible to the formation of an n-type MoS 2 intermediate layer. An improvement in conversion efficiency from 5.4% to 13.99%, often due to an increase of open-circuit voltage has been reached. [ABSTRACT FROM AUTHOR]