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LDA+U study of ferromagnetism in Ga1-xMnxN.
- Source :
-
AIP Conference Proceedings . 2020, Vol. 2265 Issue 1, p1-4. 4p. - Publication Year :
- 2020
-
Abstract
- Structural, electronic and half metallic ferromagnetic properties of Ga1-xMnxN compounds have been studied at dopant concentrations x=0.25, 0.125 and 0.0625 using LDA+U approximation implemented in SIESTA. The calculated results show that Mn doping in GaN induces ferromagnetism and originates a half metallic gap at Fermi level in majority spin channel for all concentrations. Moreover diluted magnetic semiconductor compounds retain half metallic nature at all concentrations with 100% spin polarization at Fermi level (EF). Total magnetic moment of these compounds is due to Mn-3d states and existence of small magnetic moment on Ga and N, non- magnetic atoms, for all doping concentrations is consequence of p-d hybridization of Mn-3d and N-p states. The calculated values of s-d exchange constant Nα and p-d exchange constant Nβ confirms the magnetic character of these compounds. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 2265
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 146875382
- Full Text :
- https://doi.org/10.1063/5.0016726