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Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire.
- Source :
-
Applied Physics Letters . 11/2/2020, Vol. 117 Issue 18, p1-6. 6p. - Publication Year :
- 2020
-
Abstract
- Valence and conduction band offsets of atomic layer deposition (ALD) Al2O3 deposited on bulk AlN crystals were determined using x-ray photoelectron spectroscopy to be ΔEV = 0.75 eV and ΔEC = −1.45 eV, with a measured energy gap of the Al2O3 film of 6.9 eV. In addition, crystalline AlN deposited by atomic layer epitaxy on sapphire was evaluated, resulting in a valence band offset of ΔEV = −0.75 eV and a conduction band offset of ΔEC = 3.25 eV due to the wider bandgap of the crystalline Al2O3 substrate compared to amorphous ALD Al2O3. Both heterojunctions exhibited type-II behavior and similar valence band offsets. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 117
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 146911788
- Full Text :
- https://doi.org/10.1063/5.0025835