Use of carrier injection engineering to increase the light intensity of a polycrystalline silicon avalanche mode light-emitting device.

This paper demonstrates a polycrystalline silicon avalanche mode light-emitting device. The unique N+PN+PN+ cascade structure is designed to enhance light intensity via carrier injection engineering, in which the minority carriers are injected from the forward-biased junction to the light emission junction. Visible light can be observed at the reverse-biased PN junctions when the device operating voltage exceeds 20 V. In particular, the phonon-assisted indirect interband recombination of carriers with excess energy may be the main mechanism of photon emission. A specific junction model is proposed to explain that the light intensity peaks are generated primarily via carrier injection. Comparing the spectral measurements of a single polysilicon N+P junction device and the proposed cascade device shows that the strategy of improving the luminous intensity via carrier injection engineering is feasible and effective. [ABSTRACT FROM AUTHOR]