Cite
Compensation in (2¯01) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy.
MLA
Eisner, Brian A., et al. “Compensation in (2¯01) Homoepitaxial β-Ga2O3 Thin Films Grown by Metalorganic Vapor-Phase Epitaxy.” Journal of Applied Physics, vol. 128, no. 19, Nov. 2020, pp. 1–9. EBSCOhost, https://doi.org/10.1063/5.0022043.
APA
Eisner, B. A., Ranga, P., Bhattacharyya, A., Krishnamoorthy, S., & Scarpulla, M. A. (2020). Compensation in (2¯01) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 128(19), 1–9. https://doi.org/10.1063/5.0022043
Chicago
Eisner, Brian A., Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, and Michael A. Scarpulla. 2020. “Compensation in (2¯01) Homoepitaxial β-Ga2O3 Thin Films Grown by Metalorganic Vapor-Phase Epitaxy.” Journal of Applied Physics 128 (19): 1–9. doi:10.1063/5.0022043.