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Approach of fermi level and electron-trap level in cadmium sulfide nanorods via molybdenum doping with enhanced carrier separation for boosted photocatalytic hydrogen production.
- Source :
-
Journal of Colloid & Interface Science . Feb2021, Vol. 583, p661-671. 11p. - Publication Year :
- 2021
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Abstract
- • Mo doping introduces defect state at the bottom of conduction band of CdS. • Approach of Fermi level and defect state enhances electron trapping. • Ununiform charge distribution facilitates transfer and separation of carriers. • Mo-CdS NRs display remarkably higher catalytic activity than pure CdS NRs. Doping semiconductor with non-noble metal is a promising strategy to modulate the electronic structures and therefore develop efficient photocatalysts. In this study, we report a facile one-pot solvothermal strategy to synthesize Mo-doped CdS nanorods (NRs) using ammonium tetrathiomolybdate as the sources for both of S and Mo, cadmium acetate as the Cd source, and ethanediamine as the solvent heated at 180 °C for 24 h. The experimental characterizations and theoretical calculations reveal that Mo in the form of Mo4+ is incorporated into the CdS lattice to substitute Cd2+ ions and the Mo-S-Cd bonds are formed accordingly. The Mo doping not only introduces localized electron-trapping states at the bottom of conduction band minimum, but also elevates the Fermi level towards the defect level, which endows the doped system with enhanced n -type characteristic and the defect state with strong electron-trapping ability. Moreover, a nonuniform distribution of charge density is formed for the Mo-doped CdS NRs, facilitating the separation of photoexcited charge carriers. Therefore, the Mo-doped CdS NRs exhibit remarkably enhanced photocatalytic activity, with an average H 2 production rate of 14.62 mmol·g−1·h−1 without using Pt as the co-catalyst, about 5.8 times higher than that of bare CdS. This work provides new insight into the facile synthesis of visible-light-driven photocatalysts as well as the effect of metal ion doping on the modulation of electronic structures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00219797
- Volume :
- 583
- Database :
- Academic Search Index
- Journal :
- Journal of Colloid & Interface Science
- Publication Type :
- Academic Journal
- Accession number :
- 147153539
- Full Text :
- https://doi.org/10.1016/j.jcis.2020.09.093