Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment.

MLA

Lee, Tsung-En, et al. “Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment.” IEEE Transactions on Electron Devices, vol. 67, no. 10, Oct. 2020, pp. 4067–72. EBSCOhost, https://doi.org/10.1109/TED.2020.3014563.

APA

Lee, T.-E., Ke, M., Toprasertpong, K., Takenaka, M., & Takagi, S. (2020). Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment. IEEE Transactions on Electron Devices, 67(10), 4067–4072. https://doi.org/10.1109/TED.2020.3014563

Chicago

Lee, Tsung-En, Mengnan Ke, Kasidit Toprasertpong, Mitsuru Takenaka, and Shinichi Takagi. 2020. “Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment.” IEEE Transactions on Electron Devices 67 (10): 4067–72. doi:10.1109/TED.2020.3014563.