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Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals.
- Source :
-
IEEE Transactions on Electron Devices . Oct2020, Vol. 67 Issue 10, p4335-4339. 5p. - Publication Year :
- 2020
-
Abstract
- A dual-gate superjunction insulated gate bipolar transistor (IGBT) (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations. The new structure utilizes the superjunction structure as a controlling port for the strength of conductivity modulation inside the IGBT, so that a low VON is obtained by a strong conductivity modulation during ON-state and a near-unipolar turn-off is achieved by removing the minority carriers before the turn-off event. For this purpose, the p-pillar in the DG-SJ-IGBT is connected to the p-body using a built-in p-channel MOSFET. The primary gate and the auxiliary gate (i.e., gate of p-MOSFET) are controlled by two separate driving signals. In the IGBT’s ON-state, the p-MOSFET disconnects the p-pillar, enabling full conductivity-modulated bipolar conduction and a consequent low VON. As a well-known issue, conductivity modulation is accompanied by significant additional turn-off loss (EOFF). To overcome this issue, the DG-SJ-IGBT takes advantage of the p-pillar which extends through the entire drift region. Before the IGBT’s turn-off event, the p-MOSFET electrically grounds the p-pillar to the p-body. The grounded p-pillar serves as a hole extractor, suppresses the minority carrier density throughout the depth of the drift region, and brings the device into a near-unipolar conduction mode. Thus, a near-unipolar turn-off can be obtained, resulting in a low EOFF. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 147319584
- Full Text :
- https://doi.org/10.1109/TED.2020.3014284