A simplification method for capacitance models in AlGaN/GaN high electron mobility transistors under large drain voltage using channel analysis.

This article analyzes the bias dependence of gate‐drain capacitance (Cgd) and gate‐source capacitance (Cgs) in the AlGaN/GaN high electron mobility transistors under a high drain‐to‐source voltage (Vds) from the perspective of channel shape variation, and further simplifies Cgd and Cgs to be gate‐to‐source voltage (Vgs) dependent only at high Vds. This method can significantly reduce the number of parameters to be fitted in Cgd and Cgs and therefore lower the difficulty of model development. The Angelov capacitance models are chosen for verifying the effectiveness of simplification. Good agreement between simulated and measured small‐signal S‐parameters, large‐signal power sweep, and power contours comprehensively proves the accuracy of this simplification method. [ABSTRACT FROM AUTHOR]