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Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors.
- Source :
-
Applied Physics Letters . 11/30/2020, Vol. 117 Issue 22, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- Multi-terminal memtransistors using polycrystalline monolayer molybdenum disulfide (MoS2) have recently emerged as novel synaptic devices. Due to the coexistence of disorder and strong Coulomb carrier-carrier interactions in MoS2, localization and delocalization of carriers can come into play successively upon the relative strength of disorder and interactions, which can be tuned by the Fermi level ( E F ). In this work, we show that the transition from trap-mediated to band-like transport leads to the resistive switching behavior in MoS2 memtransistors, which is driven by the E F shift arising from defect profile redistribution that is facilitated by grain boundaries. In the high resistance state, field-driven hopping conduction can be clearly observed in the high-field region (E > 0.05 MV/cm), whereas the linear dependence of l n (I / E) on the square root of the electric field, E 1 / 2 , suggests Poole–Frenkel emission in the low-field region (E ≤ 0.05 MV/cm). In the low resistance state, strong interactions prevailed and a substantial amount of thermally activated electrons are excited into the conduction band, leading to band-like transport. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 117
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 147390557
- Full Text :
- https://doi.org/10.1063/5.0031799