Application of ratiometric thermometry based on green luminescence of Er3+/Yb3+:NaGd(WO4)2 phosphor in microelectronic component.

We demonstrate the applicability of a ratiometric luminescence thermometer to microelectronic components. The thermometer, which consists of a 980 nm laser diode, two optical filters, two photocells and two multimeters, works on the basis of thermal effect on luminescence intensity ratio of 980-nm-upconverted 530 and 550 nm emissions of micron-sized Er3+/Yb3+-codoped NaGd(WO 4) 2 crystalline phosphor. The applicability is demonstrated by using it to monitor in realtime the temperature of an integrated circuit chip on a printed circuit panel (PCB) in operation. In parallel, the temperature was also measured independently using an infrared thermometer. A comparison shows that the temperature measured by the luminescence thermometer can be considered as identical to that measured by the infrared one within error. The consistency of the result from the luminescence thermometer with that from the infrared one, together with previously reported result that the NaGd(WO 4) 2 phosphor is an excellent insulator with a resistivity of 2.0 × 1011 Ω · m at 330 K, verifies the applicability of the luminescence thermometer to microelectronics, and the thermometer has a measurement error of 2 K. • Ratiometric fluorescence thermometer is applied to microelectronic components. • Er/Yb:NaGd(WO 4) 2 phosphor adopted has a high resistivity of 6.0 × 1012 Ω · m at 328 K. • The thermometer is used to monitor temperature of an integrated circuit on a PCB. • Results measured by fluorescence and infrared thermometers are thought as same. • The agreement of results verifies applicability and the measurement error is 2 K. [ABSTRACT FROM AUTHOR]