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The structure and mechanism of large-scale indium-intercalated graphene transferred from SiC buffer layer.
- Source :
-
Carbon . Jan2021, Vol. 171, p829-836. 8p. - Publication Year :
- 2021
-
Abstract
- It is reported that indium-coated SiC buffer layer can be directly transferred into graphene layer during low temperature annealing, forming as indium-intercalated graphene (InG). Atomic structures of InG as well as transformation mechanism are investigated by scanning tunneling microscopy (STM), Raman and X-ray photoelectron spectroscopy (XPS). InG on top of one-layered intercalated indium (called O-InG) exhibits Moiré patterns with period of 3.2 nm, and the atomic arrangement of indium atoms is detected. While, no Moiré patterns are observed on InG intercalated by two-layer of indium atoms (called T-InG). Both the two InG regions bind perfectly with the already existing epitaxial graphene (EG), exhibiting as an unbroken sheet of quasi-free-standing graphene layer. This finding provides a simple strategy and benefits to industrial fabrication of large-scale InG with regular SiC steps. Image 1 [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00086223
- Volume :
- 171
- Database :
- Academic Search Index
- Journal :
- Carbon
- Publication Type :
- Academic Journal
- Accession number :
- 147505507
- Full Text :
- https://doi.org/10.1016/j.carbon.2020.09.055