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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
- Source :
-
Journal of Physics D: Applied Physics . 1/21/2021, Vol. 54 Issue 3, p1-9. 9p. - Publication Year :
- 2021
-
Abstract
- The ultra-wide bandgap semiconductor gallium oxide (Ga2O3) offers substantial promise to significantly advance power electronic devices as a result of its high breakdown electric field and maturing substrate technology. A key remaining challenge is the ability to grow electronic-grade epitaxial layers at rates consistent with 20–40 μm thick drift regions needed for 20 kV and above technologies. This work reports on extensive characterization of epitaxial layers grown in a novel metalorganic chemical vapor deposition tool that permits growth rates of 1.0–4.0 μm h−1. Specifically, optical, structural and electrical properties of epilayers grown at ∼1 μm h−1 are reported, including employment in an operating MOSFET. The films demonstrate relatively smooth surfaces with a high degree of structural order, limited point defectivity (Nd − Na ≈ 5 × 1015 cm−3) and an optical bandgap of 4.50 eV. Further, when employed in a MOSFET test structure with an n+ doped channel, a record high mobility for a transistor structure with a doped channel of 170 cm2 V−1 s−1 was measured via the Hall technique at room temperature. This work reports for the first time a β-Ga2O3 MOSFET grown using Agnitron Technology's high growth rate MOCVD homoepitaxial process. These results clearly establish a significant improvement in epilayer quality at growth rates that can support future high voltage power device technologies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 54
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 147616798
- Full Text :
- https://doi.org/10.1088/1361-6463/abbc96